Characterization of Double Gate TFET using Different Dielectric Materials
نویسندگان
چکیده
منابع مشابه
Channel thickness dependency of high-k gate dielectric based double-gate CMOS inverter
This work investigates the channel thickness dependency of high-k gate dielectric-based complementary metal-oxide-semiconductor (CMOS) inverter circuit built using a conventional double-gate metal gate oxide semiconductor field-effect transistor (DG-MOSFET). It is espied that the use of high-k dielectric as a gate oxide in n/p DG-MOSFET based CMOS inverter results in a high noise margin as well...
متن کاملPerformance Analysis of Double Gate n-FinFET Using High-k Dielectric Materials
To extend the use of CMOS technology beyond 14 nm node technology, new device materials are required that can enhance the performance of MOSFETs. The use of high-k materials in double gate (DG) MOSFET can triumph over the problem of power dissipation and leakage current. In this paper, we investigated various high-k dielectrics as the gate oxides in a 12 nm SOI FinFET and the performance potent...
متن کاملDouble-Gate Tunnel FET With High-κ Gate Dielectric
In this paper, we propose and validate a novel design for a double-gate tunnel fi eld-effect transistor (DG Tunnel FET), for which the simulations show significant improvements compared with single-gate devices using an SiO2 gate dielectric. For the fi rst time, DG Tunnel FET devices, which are using a high-κ gate dielectric, are explored using realistic design parameters, showing an ON-current...
متن کاملinvestigation of gassing behavior, electric and dielectric properties of different insulating fluids.
ترانسفورماتورهای قدرت از اجزای اصلی شبکه تامین انرژی الکتریکی می باشند که عملکرد قابل اطمینان ترانسفورماتورها یکی از فاکتورهای مهم و تعیین کننده در تامین انرژی الکتریکی محسوب می شود. در نتیجه بررسی و مانیتور عملکرد ترانسفورماتورها در شبکه و همچنین عیب یابی این ترانسفورماتورها غیرقابل اجتناب و ضروری می باشد. به طور کلی عایق های مایع در صنعت فشار قوی کاربردهای متفاوتی دارند که مهمترین وظیفه آنها...
15 صفحه اولMulti-gate Mosfet Structures with High-k Dielectric Materials
Multi-gate MOSFETs has shown better results in subthreshold performances. The replacement of SiO2 by high-k dielectric can fulfill the requirements of Multi-gate MOSFETS with scaling trend in device dimensions. The advancement in fabrication technology has also boosted the use of different high K dielectric materials as oxide layer at different places in MOSFET structures. One of the most impor...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IJIREEICE
سال: 2017
ISSN: 2321-2004
DOI: 10.17148/ijireeice.2017.5510